`Structural relaxation and its effects on photoluminescence properties in Si quantum wires'
K.Nishio, J.Koga, H.Ohtani, T.Yamaguchi and F.Yonezawa
Journal of Non-Crystalline Solids 293-295 705 (2001).
We present a theoretical study of the optical absorption process of a 9~9 Si quantum wire. We
calculate the imaginary part of the dielectric constant \epsilon_2 and the contribution to \epsilon_2 due to three Si
atoms located in different positions using the non-orthogonal tight-binding method. From these
calculations, we clearly find for the first time that the optical absorption below 3.4 eV tends to occur
in the inner region of the 9~9 Si quantum wire.
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2001/12/10